Knowledge Bank

The $1.54\mu$m photoluminescence $(4I13/2\to 4I15/2$ intra-4f shell emissions) of $Er3+$ doped in the semiconductor GaN has attracted interest for a long time, because of the potential application in optical communications due to its efficient transmission and temperature stability in semiconductor-based fibers. In our current research, we use ab initio spin-orbit configuration interaction calculations with relativistic effective core potentials to study the wave function character and energy of both the ground and excited states of $ErN49-$ aiming to compare the calculated transition frequency between those states with the available experimental data. In this calculation, $ErN49-$ has a local tetrahedral symmetry in the GaN crystal. The transition moments will be computed as well to understand the interactions giving a non-zero value.