THEORETICAL STUDY OF $Er^{3+}$ DOPED IN SEMICONDUCTOR GaN BASED ON RELATIVISTIC QUANTUM CHEMICAL METHOD
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Date
2003
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Ohio State University
Abstract
The $1.54 \mu$m photoluminescence $(^{4} I_{13/2} \rightarrow^{4}I_{15/2}$ intra-4f shell emissions) of $Er^{3+}$ doped in the semiconductor GaN has attracted interest for a long time, because of the potential application in optical communications due to its efficient transmission and temperature stability in semiconductor-based fibers. In our current research, we use ab initio spin-orbit configuration interaction calculations with relativistic effective core potentials to study the wave function character and energy of both the ground and excited states of $ErN^{9-}_{4}$ aiming to compare the calculated transition frequency between those states with the available experimental data. In this calculation, $ErN^{9-}_{4}$ has a local tetrahedral symmetry in the GaN crystal. The transition moments will be computed as well to understand the interactions giving a non-zero value.
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Author Institution: Department of Chemistry, The Ohio State University