Vacancy defect and defect cluster energetics in ion-implanted ZnO

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2010-02-01

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American Physical Society

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We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

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Yufeng Dong et al, "Vacancy defect and defect cluster energetics in ion-implanted ZnO," Physical Review B 81, no. 8 (2010), doi:10.1103/PhysRevB.81.081201

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http://hdl.handle.net/1811/48006

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Ohio State University Research and Scholarship