Characterization and Modeling of Atomically Sharp Perfect Si:Ge/SiO_2 Interfaces

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fac_WindlW_ECSTransactions_2006_3_7.pdf (2.79 MB)

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2006

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The Electrochemical Society

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Using ab-initio calculations and atomic-resolution Z-contrastimag-ing and electron energy-loss spectroscopy, we show thatoxidation of a germanium-implanted Si surface can produce anatomically-sharp interface with a band structure that seems tobe more favor-able for use in electronic devices than theusually diffuse interface in Si/SiO_2. Furthermore, wepropose an ab-initio based Monte-Carlo model to simulateoxidation of SiGe alloys to better under-stand the formation ofthe sharp interface.

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Wolfgang Windl et al, "Characterization and Modeling of Atomically Sharp Perfect Si:Ge/SiO_2 Interfaces," ECS Transactions 3, no. 7 (2006), doi:10.1149/1.2355851

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http://hdl.handle.net/1811/49199

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Ohio State University Research and Scholarship