Step-Scan Time Resolution of the photoluminescence of Porous Silicon

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1994

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Ohio State University

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Rapid-scan and step-scan time resolved Fourier transform techniques have been employed to monitor the photoluminescence of porous silicon. The 514 nm line of an argon ion laser was chopped and allowed to impinge on a porous silicon wafer. The resultant radiation, centered at 740 nm, was collected through an emission port of a Bruker model IFS 66 spectrometer-Rapid-scan measurements proved too Blow to resolve the photoluminescence decay time, while step-scan measurements revealed a lifetime of 50 $\mu$S.

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Author Institution: Bruker instruments, Inc.; Bruker Analytischen Messtechnik GMBH; Max plank Institut fur Mikrostrukturphysik

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