Electron-Ion Recombination Rate Coefficients For Si I, Si II, S II, S III, C II, and C-like Ions C I, N II, O III, F IV, Ne V, Na VI, Mg VII, Al VIII, Si IX, and S XI
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Date
1995-12
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Abstract
A new unified treatment for electron-ion recombination is employed to obtain recombination rate coefficients for silicon, sulfur, and carbon ions of importance in the study of the interstellar medium and H II regions in general. Improved and extended results are also presented for ions in the carbon isoelectronic sequence. Recombination rate coefficients are tabulated at a wide range of temperatures, from 10^1 to 10^9 K. These rates correspond to total electron-ion recombination Incorporating both the radiative and dielectronic recombination processes calculated in an ab initio manner.
Description
Relevant data is available at: http://www.astronomy.ohio-state.edu/~nahar/nahar_radiativeatomicdata/index.html
Includes article and erratum
Keywords
atomic data, atomic processes
Citation
Nahar, Sultana Nurun, "Electron-Ion Recombination Rate Coefficients For Si I, Si II, S II, S III, C II, and C-like Ions C I, N II, O III, F IV, Ne V, Na VI, Mg VII, Al VIII, Si IX, and S XI," The Astrophysical Journal Supplement Series, v. 101, pp 423-434, December 1995.