Relativistic Fine Structure and Resonance Effects in Electron-Ion Recombination and Excitation of (e + C IV)

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Date

2001-10-29

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American Physical Society

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Abstract

Relativistic close coupling calculations are reported for unified electronic recombination of (e + C IV) including nonresonant and resonant recombination processes, radiative, and dielectronic recombination (RR and DR). Detailed benchmarking of the theoretical unified results with two recent experiments on ion storage rings [S. Mannervik et al., Phys. Rev. Lett. 81, 313 (1998) and S. Schippers et al., Astrophys. J. 555, 1027 (2001)] shows very good agreement in the entire measured energy region 2s-2p with 2pnl resonances to ~15%. The resonant and the background cross sections are not an incoherent sum of separate RR and DR contributions. The electron impact excitation (EIE) cross sections are also compared with recent experimental measurements. Fine structure threshold effects in EIE and DR are delineated for the first time and should be of general importance.

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Relevant data is available at: http://www.astronomy.ohio-state.edu/~nahar/nahar_radiativeatomicdata/index.html

Keywords

electronic recombination, electron impact excitation (EIE)

Citation

Pradhan, Anil K., Chen, Guo Xin, Nahar, Sultana Nurun, Zhang, Hong Lin. "Relativistic Fine Structure and Resonance Effects in Electron-Ion Recombination and Excitation of (e + C IV)," Physical Review Letters, v. 87, no. 18, October, 2001.