Relativistic Fine Structure and Resonance Effects in Electron-Ion Recombination and Excitation of (e + C IV)
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Date
2001-10-29
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society
Abstract
Relativistic close coupling calculations are reported for unified electronic recombination of (e + C IV) including nonresonant and resonant recombination processes, radiative, and dielectronic recombination (RR and DR). Detailed benchmarking of the theoretical unified results with two recent experiments on ion
storage rings [S. Mannervik et al., Phys. Rev. Lett. 81, 313 (1998) and S. Schippers et al., Astrophys. J. 555, 1027 (2001)] shows very good agreement in the entire measured energy region 2s-2p with 2pnl
resonances to ~15%. The resonant and the background cross sections are not an incoherent sum of separate RR and DR contributions. The electron impact excitation (EIE) cross sections are also compared with recent experimental measurements. Fine structure threshold effects in EIE and DR are delineated
for the first time and should be of general importance.
Description
Relevant data is available at: http://www.astronomy.ohio-state.edu/~nahar/nahar_radiativeatomicdata/index.html
Keywords
electronic recombination, electron impact excitation (EIE)
Citation
Pradhan, Anil K., Chen, Guo Xin, Nahar, Sultana Nurun, Zhang, Hong Lin. "Relativistic Fine Structure and Resonance Effects in Electron-Ion Recombination and Excitation of (e + C IV)," Physical Review Letters, v. 87, no. 18, October, 2001.