DETERMINATION OF REACTION RATE AND DIFFUSION CONSTANTS OF THE $S1H_{3}$ RADICAL IN SILANE PLASMAS
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Date
1989
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Volume Title
Publisher
Ohio State University
Abstract
Time resolved infrared spectra of $S1H_{3}$ were observed in pulsed discharge silane plasmas using diode laser kinetic spectroscopy. The rate of recombination plus disproportionation reactions was determined for the first time, together with the diffusion constants of $SiH_{3}$ in hydrogen and argon. These fundamental quantities will be useful in discussing CVD mechanisms leading to amorphous silicon.
Description
Author Institution: Institute for Molecular Science; Nagoya University