MATRIX ISOLATION STUDIES OF CHEMICAL VAPOR DEPOSITION: THE $(CH_{3})_{3}Ga/AsH_{3}$ and $(CH_{3})_{3}Ga/PH_{3}$ SYSTEMS
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Date
1991
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Ohio State University
Abstract
Lewis acid-base concept predicts the initial formation of a 1:1 molecular adduct between trimethylgallium and arsine, which are gaseous precursors for the chemical vapor deposition of the semiconductor gallium arsenide. Isolation and characterization of this $(CH_{3})_{3}Ga\cdot AsH_{3} $ adduct for the first time using infrared matrix isolation technique showed that it has an effective symmetry of $C_{3v}$. The corresponding adduct of phosphine with trimethylgallium has also been isolated and characterized using this technique. In addition, results of gas-phase studies indicate that both adducts may exist in the gas phase. Subsequent 193 nm photolysis of the ${(CH_{3})}_{3}Ga\cdot AsH_{3} $ adduct shows that an eliminated methyl radical abstracts a hydrogen to form methane and probably ${(CH_{3})}_{2}Ga\cdot AsH_{2}$. The photolysis of ${(CH_{3})}_{3}Ga $ at 193 nm has also been studied and results strongly indicate the production of dimethylgallium and methyl radicals.
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Author Institution: Department of Chemistry, University of Cincinnati