RAMAN SPECTROSCOPY OF SEMICONDUCTOR-OXIDE INTERFACES
Loading...
Date
1979
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Ohio State University
Abstract
Thermal oxidation and electrochemical anodization of III-V semiconductor surfaces produce protective oxide coatings and an interfacial region where localized thermally induced chemical reactions can occur. The system GaAs - oxide ($Ga_{2}O_{3} + As_{2}O_{3}$) was studied using a Raman backscattering method. The interfacial reaction $2GaAs + As_{2}O_{3} \rightarrow Ga_{2}O_{3} + 4As$ occurs slowly at $350^{\circ} C$ and rapidly at $500^{\circ} C$ producing amorphous and crystalline arsenic that is localized in a region near the semiconductor surface. Chemical etching experiments reveal that amorphous arsenic is closer to the GaAs surface than the crystalline form and using thin oxide films ($d\leq 300$ {\AA}), the minimum detection limit for arsenic is the order of 10 {\AA}.
Description
Author Institution: