INFRARED EMISSION STUDIES OF THE $A^{3}\Sigma^{-} - X^{3}\Pi$ ELECTRONIC TRANSITION OF SiC

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1998

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Ohio State University

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The gas phase infrared emission spectrum of the A3ΣX3Π electronic transition of SiC has been observed using Fourier transform spectrometer. The SiC radical was generated by a d*** discharge in a flowing mixture of (CH3)6Si2 and He. Three bands 1−0(4577.8cm−1),0−0(3723.1cm−1) and 0−1(2769.8cm−1) have been observed, out of these the last two were observed for the first timea. Altogether more than 1100 transitions have been assigned and these data were simultaneously least squares fitted and obtained the molecular constants for SiC in the A3Σ and X3Π electronic states. The vibrational frequency ν0 in the A state was determined to be 854.6994(7)cm−1, which is close to the matrix resultb854.2cm−1.

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a4577.8cm−1 band was first observed by Brazier et. al. [J. Chem. Phys., 91, 7384(1989)] and they identified it as 0-0 band. bM. Grutter, P. Freivogel and J.P. Maier, J. Phys. Chem. A, 101, 275(1997)


Author Institution: Nobeyama Radio Observatory, Minamimaki

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