A New Approach for the Study of Chemical Mechanical Polishing

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fac_FrankelG_Electrochem. Solid-State Lett._2000_3_2.pdf (194.67 KB)

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1999-12-16

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The Electrochemical Society

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Abstract

The process of chemical mechanical polishing (CMP) can be studied using in situ atomic force microscopy (AFM) by intentionally using a high tip/sample interaction force. The nominal removal rate ofAl during AFM scratching is studied under a range of conditions including varying tip/sample force, solution pH, and electrode potential. This approach should be useful for CMP process development and furthering the fundamental understanding of CMP mechanisms.

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D. Devecchio, P. Schmutz, and G. S. Frankel, "A New Approach for the Study of Chemical Mechanical Polishing," Electrochemical and Solid-State Letters 3, no. 2 (2000), doi:S1099-0062(99)09-098-7

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http://hdl.handle.net/1811/49205

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Ohio State University Research and Scholarship