FIRST APPLICATION OF InAsSb/InAsSbP AND LEADCHALKOGENIDE INFRARED DIODE LASERS FOR PHOTOACOUSTIC DETECTION IN THE 3.2 AND $5\mu$m REGION.
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Abstract
A new type of semi-conductor lasers with composition InAsSb/InAsSbP are described. The lasers, working in the range of temperatures (
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Author Institution: J. Heyrovsk'{y} Institute of Physical Chemistry, Academy of Sciences of the Czech Republic