Oscillator strengths for dipole-allowed fine-structure transitions in Si II
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Abstract
An extensive dataset of oscillator strengths, line strengths, and Einstein A-coefficients has been calculated for a large number of dipole-allowed (ΔS=0) fine-structure transitions in Si II. The line strengths in LS coupling are obtained in an ab initio manner in the close-coupling approximation employing the R-matrix method. The fine-structure components are obtained through algebraic transformations of the LS multiplets. Observed spectroscopic energies are employed whenever available. A 12-state eigenfunction expansion of the core ion, Si III, is employed for the present calculations. This work presents the oscillator strengths of 1122 fine-structure transitions in Si II corresponding to 390 LS multiplets and provides a reasonably complete set of radiative transitions for this astrophysically important ion for the first time. Present results are of comparable accuracy to previous detailed calculations obtained for a small number of transitions and are in reasonably good agreement with the measured oscillator strengths and lifetimes.