Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Thumbnail Image

Files

fac_WindlW_PhysicalReviewB_2010_81_3.pdf (240.08 KB)

Date

2010-01-19

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

American Physical Society

Research Projects

Organizational Units

Journal Issue

Abstract

We have used ab initio simulations to study the doping efficiency of amorphous semiconductors, in particular of B-doped amorphous Si. We have found that even in the optimum case of substitutional doping in dangling-bond free amorphous Si the holes provided by B atoms do not behave as free carriers. Instead, they are trapped into regions with locally distorted bond angles. Thus, the effective activation energy for hole conduction turns to be the hole binding energy to these traps. In the case of high B concentration, the trap states move deeper in the gap and the binding energy and spatial localization of holes increase. In addition, B atoms have lower energies for shorter bond lengths, configurations favored in the vicinity of these traps.

Description

Keywords

Citation

I. Santos et al, "Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency," Physical Review B 81, no. 3 (2010), doi:10.1103/PhysRevB.81.033203

URI

http://hdl.handle.net/1811/48147

Collections

Ohio State University Research and Scholarship