Knowledge Bank

Problem: to not use the classical Kramers-Kronig integral transformation and to define all optical electron oscillation parameters for any energy point from semiconducting nanostructure experimental reflection spectra} \textit{Proceedings}, Editors: J. Kono, Jean Leotin, Toulouse, France,\textbf {2}, 178-183, (3-7 July 2005)}. Within the untied oscillation model the calculation technique of all semiconducting heterostructure optical parameters by the intermediate functions ($\hslash \cdot \omega \pi$, $\hslash \cdot \omega n$, $\hslash \cdot \Gamma$) are the plasma, effective natural, radiant friction energies in eV, $2\cdot \pi \cdot \hslash$ is the Planck constant) is presented. As an example the optical parameters of PbS, PbSe, PbTe and GaAs, GaP between 0 and 25 eV in any spectrum region are established. The consistent approximation approach of the reflectance factor R to real value is advanced. As a result, all heterostructure basic electron optical functions ($\hslash \cdot \omega p$, $\hslash \cdot \omega pm$, $\hslash \cdot \omega c$, $\hslash \cdot \gamma$ are the plasma, plasma maximum, effective natural, radiant friction energies, $\epsilon r$, $\epsilon \iota$, n, n are the real and imaginary components of the dielectric $\epsilon$ and refractive index n functions, accordingly, $(\epsilon r)max$, $(\epsilon r)min$, $(\hslash \cdot \omega )\bullet \epsilon \iota$ is conductivity, $(\hslash \cdot \omega )\bullet n\iota =(c\cdot \hslash /2)\bullet \alpha$, where c is the light velocity, $\alpha$ is absorption coefficient, $L=Im(-1/\epsilon )$ are electron lossis, equal imaginary component of the minus reciprocal dielectric function $\epsilon$, $\hslash \cdot \omega \bullet L=(\hslash \cdot \omega )\bullet Im(-1/\epsilon )$ are effective electron lossis) calculated by the intermediate functions in any electron optical spectrum region. Then, for GaP experimental reflection spectra it is selected the point $\hslash 2\cdot \omega 2=10.5625\bullet 10-4$, the intermediate parameters are $\hslash 2\cdot \omega \pi 2=10.5625\bullet 10-4$, $\hslash 2\cdot \omega n2=9.03130933157\bullet 10-4$, $\hslash 2\cdot \Gamma 2=1.875029665786\bullet 10-4$, the basic parameters are $\hslash 2\cdot \omega p2=19.5902684716\backslash linebreak\bullet 10-4$, $\hslash 2\cdot \omega c2=5.28479085993\bullet 10-4$, $\hslash 2\cdot \gamma 2=0.79237637701\bullet 10-4$ (eV)$\mathrm{<mrow\; data-mjx-texclass="ORD">2</mrow>}$. The R values calculated by electron parameters coincide with the experimental values $R(\hslash \omega )$ to within $10-6÷10-10$ for 12 symbol computation. By presented method the nanostructure oscillation electron parameters are determined for device producing.