NEW SPECTRA OF $SiH^{+}$ AND $SiD^{+}$

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1992

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Ohio State University

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Extensive series of new emission bands of SiH+ and SiD+ spectrum have been observed in the region 170 nm -- 200 nm from a high frequency discharge through a mixture of a trace of SiCl4 in helium and hydrogen. This spectrum has been recorded at high resolution by a 6.6 m vacuum spectrograph. Rotational and vibrational analyses are carried out and molecular constants of the electronic states are determined. The rotational structure follows a simple 1Σ1Σ transition. Ten bands of SiH+ and fifteen bands of SiD+ are explained as transitions between three new excited electronic levels and the lowest 3Π0 state predicted from theoretical calculations.1 The carrier of the spectrum is confirmed by the observed isotopic effect.

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1. David M. Hirst, Chem. Phys. Lett., 128, 504 (1986).


Author Institution: Department of Physics, University of New Brunswick

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