NEW SPECTRA OF $SiH^{+}$ AND $SiD^{+}$
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Date
1992
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Ohio State University
Abstract
Extensive series of new emission bands of $SiH^{+}$ and $SiD^{+}$ spectrum have been observed in the region 170 nm -- 200 nm from a high frequency discharge through a mixture of a trace of $SiCl_{4}$ in helium and hydrogen. This spectrum has been recorded at high resolution by a 6.6 m vacuum spectrograph. Rotational and vibrational analyses are carried out and molecular constants of the electronic states are determined. The rotational structure follows a simple $^{1}\Sigma-^{1}\Sigma$ transition. Ten bands of $SiH^{+}$ and fifteen bands of $SiD^{+}$ are explained as transitions between three new excited electronic levels and the lowest $^{3}\Pi_{0}$ state predicted from theoretical $calculations.^{1}$ The carrier of the spectrum is confirmed by the observed isotopic effect.
Description
$^{1}$. David M. Hirst, Chem. Phys. Lett., 128, 504 (1986).
Author Institution: Department of Physics, University of New Brunswick
Author Institution: Department of Physics, University of New Brunswick