LASER SPECTROSCOPY OF $SiF_{2}$ AND CHEMILUMINESCENCE IN REACTIONS WITH FLUORINE ATOMS AND MOLECULES

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1985

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Ohio State University

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The $SiF_{2}$ radical is an important intermediate in the plasma etching of silicon in fluorocarbon plasmas, a widely used semiconductor device fabrication process. We report tunable dye laser fluorescence and tunable diode laser infrared absorption spectra of $SiF_{2}$, taken as part of a program of development of laser diagnostics for such processes. We also used these diagnostics in a fast flow reactor to measure the kinetics of $SiF_{2}$ reactions with F and $F_{2}$. The chemiluminescence observed during plasma etching has been attributed to these $reactions,^{1}$ although some doubt $remains.^{2}$ The similarity in activation engergies for the emission and etching has been used as deciding evidence in a detailed model of the etching process. We will present results on the chemiluminescent spectrum from the reaction of F and $F_{2}$ with $SiF_{2}$ formed from two different sources, $SiF_{4}$ passed over hot Si, and thermal decomposition of $Si_{2} F_{6}$.

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$^{1}$J.A. Mucha, D.L. Flamm, and V.M. Donnelly, J. Appl. Phys. 53, 4553 (1982). $^{2}$H.F. Winters and F.A. Houle, J. Appl. Phys. 54, 1218 (1983) $^{3}$J.A. Mucha, V.M. Donnelly, and D.L. Flamm, J. Phys. Chem. 85, 3529 (1981)
Author Institution: Aerodyne Research, Inc.; Aerodyne Research, Inc.; Aerodyne Research, Inc.; Department of Chemistry, Washington University

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