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dc.creatorDas, S. G.en_US
dc.creatorKoelling, D. D.en_US
dc.creatorMueller, F. M.en_US
dc.creatorFreeman, A. J.en_US
dc.date.accessioned2006-06-15T13:33:08Z
dc.date.available2006-06-15T13:33:08Z
dc.date.issued1972en_US
dc.identifier1972-P-6en_US
dc.identifier.urihttp://hdl.handle.net/1811/9089
dc.descriptionAuthor Institution: Argonne National Laboratory; Argonne National Laboratory, Northwestern University; Argonne National Laboratory, Northwestern Universityen_US
dc.description.abstractThe band structure of scandium is studied on the basis of the SRAPW method and an interpolation scheme which uses the s, p, d type functions in the tight-binding representation. The warped muffin-tin potential was obtained from overlapping charge densities which were derived from the atomic configuration $3d4s^{2}$ with the exchange interaction based on the Slater approximation. The Hamiltonian of the interpolation scheme was parameterized in terms of 16 parameters in a two-center approximation. The results obtained for the total density of states, the factorized d density of states, etc., are in excellent agreement with the experimental results. This research was supported by the AEC, AFOSR and by ARPA through the N.U. Materials Research Center.en_US
dc.format.extent111398 bytes
dc.format.mimetypeimage/jpeg
dc.language.isoEnglishen_US
dc.publisherOhio State Universityen_US
dc.titleELECTRONIC STRUCTURE OF SCANDIUMen_US
dc.typearticleen_US


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