IMPURITY EFFECTS ON THE SEMICONDUCTIVE BEHAVIOR OF ANTHRACENE BY GAMMA-RAY IRRADIATION
Creators:Hyun, Jae Kyung
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Publisher:Ohio State University
Anthracene single crystals were grown after zone refining. The activation energy was evaluated by DC method, with the temperature varying from 15 to 150 degrees in Centigrade. The results on the conduction mechanism, intrinsic as well as extrinsic, were analyzed and compared with the photoconductive method. In particular, the impurity effects were examined through a high dose of gamma ray irradiation. The charge polarization effect and the dielectric relaxation effect were compared, through the examination of the current decay mode.
Author Institution: Department of Physics, Kyung Hec University
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