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dc.contributor.advisorMyers, Roberto
dc.creatorCarnevale, Santino
dc.date.accessioned2013-04-01T20:24:05Z
dc.date.available2013-04-01T20:24:05Z
dc.date.issued2013-03
dc.identifier.urihttp://hdl.handle.net/1811/54451
dc.descriptionEngineering: 2nd Place (The Ohio State University Edward F. Hayes Graduate Research Forum)en_US
dc.description.abstractIt is difficult to control electrical conductivity in wide band gap semiconductors using impurity doping because of large ionization energies in these materials. Polarization-induced doping in compositionally graded heterostructures is a possible alternative to impurity doping in certain wide band gap materials. Here we present compositionally graded AlGaN nanowires grown on Si(111) substrates by plasma-assisted molecular beam epitaxy that utilize polarization-induced doping to form p-n junctions. GaN quantum wells are inserted into the nanowires to create polarization-induced nanowire light emitting diodes (PINLEDs) that emit ultraviolet light. Variable temperature electrical measurements show that dopants in the structure are ionized by polarization-induced charge and therefore do not freeze-out at cryogenic temperatures. Furthermore, electroluminescence measurements show that polarization-induced charge alone (i.e. with no intentionally added dopants) can be used to form working LEDs.en_US
dc.language.isoen_USen_US
dc.relation.ispartofseries2013 Edward F. Hayes Graduate Research Forum. 27then_US
dc.subjectpolarization-induced dopingen_US
dc.subjectIII-nitridesen_US
dc.subjectnanostructuresen_US
dc.subjectmolecular beam epitaxyen_US
dc.subjectlight emitting diodesen_US
dc.titlePolarization Doped Nanowire Devices as an Alternative to Impurity Dopingen_US
dc.typeArticleen_US
dc.description.embargoNo embargoen_US


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