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dc.creatorThorwirth, S.en_US
dc.creatorMuck, L. A.en_US
dc.creatorGauss, J.en_US
dc.creatorTamassia, F.en_US
dc.creatorLattanzi, V.en_US
dc.creatorMcCarthy, M. C.en_US
dc.date.accessioned2011-07-12T17:28:47Z
dc.date.available2011-07-12T17:28:47Z
dc.date.issued2011en_US
dc.identifier2011-RH-08en_US
dc.identifier.urihttp://hdl.handle.net/1811/49366
dc.descriptionAuthor Institution: I. Physikalisches Institut, Universitat zu Koln, 50937 Koln, Germany; Institut fur Physikalische Chemie, Universitat Mainz, 55099 Mainz, Germany; Dipartimento di Chimica Fisica e Inorganica, Universita di Bologna, I-40136 Bologna, Italy; Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138, and School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138en_US
dc.description.abstractSilicon oxysulfide, OSiS, and seven of its minor isotopic species have been characterized for the first time in the gas phase at high spectral resolution by means of Fourier-transform microwave spectroscopy. The equilibrium structure of OSiS has been determined from a combination of experimental ground state rotational constants and calculated vibrational corrections to those. The structural parameters %($r_{O-Si}$=1.5064 \AA\ and $r_{Si-S}$=1.9133 \AA) are in good agreement with values from high-level quantum-chemical calculations using coupled-cluster techniques together with sophisticated additivity and extrapolation schemes. %The bond distances in OSiS are very short in comparison to SiO and SiS. This unexpected finding is explained by the partial charges %calculated for OSiS via a natural population analysis. %The results convey that electrostatic effects rather than multiple bonding are the key to understand the bonding situation in OSiS. %The data presented provide the spectroscopic information needed for radio-astronomical searches for OSiS in space.en_US
dc.language.isoenen_US
dc.publisherOhio State Universityen_US
dc.titleROTATIONAL SPECTRUM SPECTRUM AND COUPLED-CLUSTER CALCULATIONS OF SILICON OXYSULFIDE, O=Si=Sen_US
dc.typeArticleen_US


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