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dc.creatorDevecchio, D.
dc.creatorSchmutz, P.
dc.creatorFrankel, G. S.
dc.date.accessioned2011-07-08T13:55:38Z
dc.date.available2011-07-08T13:55:38Z
dc.date.issued1999-12-16
dc.identifier.citationD. Devecchio, P. Schmutz, and G. S. Frankel, "A New Approach for the Study of Chemical Mechanical Polishing," Electrochemical and Solid-State Letters 3, no. 2 (2000), doi:S1099-0062(99)09-098-7en_US
dc.identifier.issn1944-8775
dc.identifier.urihttp://hdl.handle.net/1811/49205
dc.description.abstractThe process of chemical mechanical polishing (CMP) can be studied using in situ atomic force microscopy (AFM) by intentionally using a high tip/sample interaction force. The nominal removal rate ofAl during AFM scratching is studied under a range of conditions including varying tip/sample force, solution pH, and electrode potential. This approach should be useful for CMP process development and furthering the fundamental understanding of CMP mechanisms.en_US
dc.language.isoen_USen_US
dc.publisherThe Electrochemical Societyen_US
dc.rights© The Electrochemical Society, Inc. 2000. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters, 3 (2) 90-92.en_US
dc.titleA New Approach for the Study of Chemical Mechanical Polishingen_US
dc.typeArticleen_US
dc.identifier.doiS1099-0062(99)09-098-7
dc.identifier.osuauthorfrankel.10


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