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dc.creatorWindl, Wolfgang
dc.date.accessioned2011-07-08T13:51:29Z
dc.date.available2011-07-08T13:51:29Z
dc.date.issued2006
dc.identifier.citationWolfgang Windl, "Ab-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in Silicon," ECS Transactions 3, no. 4 (2006), doi:10.1149/1.2355755en_US
dc.identifier.issn1938-6737
dc.identifier.urihttp://hdl.handle.net/1811/49198
dc.description.abstractIn this paper, we discuss concepts and examples of ab-initio calculations to understand the energetics and kinetics of defects and impurities in silicon. We focus on how to determine equilibrium distributions and diffusion and reaction constants,where modern methods such as the nudged elastic band method in combination with density-functional theory allow a systematic and reliable search for the minimum-energy migration paths and barriers. Since calculations especially for Si self-diffusion give sometimes controversial results when compared to experiments, we also discuss their validity and possible improved theoretical approaches in order to enhance the predictive power of ab-initio calculations.en_US
dc.language.isoen_USen_US
dc.publisherThe Electrochemical Societyen_US
dc.rights© The Electrochemical Society, Inc. 2006. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 3 (4) 171-182.en_US
dc.titleAb-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in Siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2355755
dc.identifier.osuauthorwindl.1


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