Reconstruction Control of Magnetic Properties during Epitaxial Growth of Ferromagnetic Mn_3-δGa on Wurtzite GaN(0001)
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Publisher:American Physical Society
Citation:Erdong Lu et al, "Reconstruction Control of Magnetic Properties during Epitaxial Growth of Ferromagnetic Mn_3-δGa on Wurtzite GaN(0001)," Physical Review Letters 97, no. 14 (2006), doi:10.1103/PhysRevLett.97.146101
Binary ferromagnetic Mn_3-δGa (1.2<3-δ≤1.5) crystalline thin films have been epitaxially grown on wurtzite GaN(0001) surfaces using rf N-plasma molecular beam epitaxy. The film structure is face-centered tetragonal with CuAu type-I (L1_0) ordering with (111) orientation. The in-plane epitaxial relationship to GaN is nearly ideal with [11̅ 0]_MnGa∥[11̅ 00]_GaN and [112̅ ]_MnGa∥[112̅ 0]_GaN. We observe magnetic anisotropy along both the in-plane and out-of-plane directions. The magnetic moments are found to depend on the Mn/(Mn+Ga) flux ratio and can be controlled by observation of the surface reconstruction during growth, which varies from 1×1 to 2×2 with increasing Mn stoichiometry.