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dc.creatorTivarus, C.
dc.creatorPelz, J. P.
dc.creatorHudait, M. K.
dc.creatorRingel, S. A.
dc.date.accessioned2011-02-24T18:08:26Z
dc.date.available2011-02-24T18:08:26Z
dc.date.issued2005-05-23
dc.identifier.citationC. Tivarus et al, "Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts," Physical Review Letters 94, no. 20 (2005), doi:10.1103/PhysRevLett.94.206803en_US
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1811/48073
dc.description.abstractModel metal-semiconductor nanostructure Schottky nanocontacts were made on cleaved heterostructures containing GaAs quantum wells (QWs) of varying width and were locally probed by ballistic electron emission microscopy. The local Schottky barrier was found to increase by ∼0.140 eV as the QW width was systematically decreased from 15 to 1 nm, due mostly to a large (∼0.200 eV) quantum-confinement increase to the QW conduction band. The measured barrier increase over the full 1 to 15 nm QW range was quantitatively explained when local "interface pinning" and image force lowering effects are also considered.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.rights©2005 The American Physical Societyen_US
dc.titleDirect Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontactsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.94.206803
dc.identifier.osuauthorpelz.2
dc.identifier.osuauthorringel.5


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