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dc.creatorHarmon, N. J.
dc.creatorPutikka, W. O.
dc.creatorJoynt, R.
dc.date.accessioned2011-02-23T19:02:56Z
dc.date.available2011-02-23T19:02:56Z
dc.date.issued2010-02-16
dc.identifier.citationN. J. Harmon, W. O. Putikka, R. Joynt, "Theory of electron spin relaxation in n-doped quantum wells," Physical Review B 81, no. 8 (2010), doi:10.1103/PhysRevB.81.085320en_US
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1811/48030
dc.description.abstractRecent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin-relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin-relaxation times in GaAs and CdTe quantum wells.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.rights©2010 The American Physical Societyen_US
dc.titleTheory of electron spin relaxation in n-doped quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.81.085320
dc.identifier.osuauthorharmon.171
dc.identifier.osuauthorputikka.1


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