Show simple item record

dc.creatorHarmon, N. J.
dc.creatorPutikka, W. O.
dc.creatorJoynt, R.
dc.identifier.citationN. J. Harmon, W. O. Putikka, R. Joynt, "Theory of electron spin relaxation in n-doped quantum wells," Physical Review B 81, no. 8 (2010), doi:10.1103/PhysRevB.81.085320en_US
dc.description.abstractRecent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin-relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin-relaxation times in GaAs and CdTe quantum wells.en_US
dc.publisherAmerican Physical Societyen_US
dc.rights©2010 The American Physical Societyen_US
dc.titleTheory of electron spin relaxation in n-doped quantum wellsen_US

Files in this item


Items in Knowledge Bank are protected by copyright, with all rights reserved, unless otherwise indicated.

This item appears in the following Collection(s)

Show simple item record