IR-MW DOUBLE RESONANCE SPECTROSCOPY OF THE $SiF_{4} \upsilon_{3}$ FUNDAMENTAL USING A TUNABLE DIODE LASER

Abstract

Pure rotational transitions among the tetrahedral fine structure splittings of $SiF_{4}\upsilon_{3}$ state were investigated by infrared-radiofrequency double resonance. A laser diode provided by Fujitsu Ltd. was used as an infrared pumping radiation source. About 100 transitions were measured with the accuracy of a few tens of kHz in the frequency range of 1 to 500 MHz. Tensor constants of the excited state were determined accurately. This work was supported by Joint Research Program of Institute for Molecular Science in 1981-1982.