MATRIX ISOLATION STUDY OF THE REACTIONS OF DIMETHYLZINC WITH SELECTED GROUP VI AND V BASES

Abstract

Metalorganic molecular beam epitaxy (MOMBE) is used for the production of wide-gap II-VI semiconductor thin films, such as $ZnSe, ZnZe_{1-4}S$, and ZnS. The precursors $Me_{2}Zn$ or $Et_{2}Zn$ react with $H_{2}S$, $H_{2}Se$ and $R_{2}Se(R=Me,Et)$. As an A-type acceptor, unstable adducts are predicted as the intermediates in the reactions between these pairs. FTIR spectroscopy was employed to characterized the initial products trapped in an argon matrix at 14 k. The primary results showed that very weak 1:1 adducts formed with $Me_{2}Zn-H_{2}S(D_{2}S),Me_{2}Z-Me_{2}S$ and $Me_{2}Zn-Me_{2}Se$ pairs. The extent of the interaction of the the base with $Me_{2}Zn$ varied in the order: $Me_{2}S-Me_{2}Se>H_{2}S-D_{2}S$ as expected. There was no significant temperature dependence for the adduct yield below $380^{\circ}C$. On the other hand, the intensity of the new features from the $Me_{2}Zn-MeSH$ pair did depend on temperature strongly. MeZnSMe may form on pyrolysis. The structures of the above adducts and the reactions of $Me_{2}Zn-H_{2}Se. PH_{3}$ and $AsH_{3}$ pairs are under investigation and will be reported.