TOWARDS THE DEVELOPMENT OF IR SPECTROSCOPIC METHODS FOR THE STUDY OF SILICON SURFACES IN THE PRESENCE OF REACTIVE PLASMAS
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Publisher:Ohio State University
Calculations have been made which show that the techniques we have successfully employed for the study of adsorbates on low-area metal surfaces may be adapted to the study of silicon surfaces in the presence of reactive plasmas. It appears that either internal or external reflection may be used but the most exciting possibility seems to be the examination of the wave-length dependence of polarized reflection at the Brewster angle. We hope to have some preliminary experimental results.
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