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Ab-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in Silicon

Please use this identifier to cite or link to this item: http://hdl.handle.net/1811/49198

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Title: Ab-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in Silicon
Creators: Windl, Wolfgang
Issue Date: 2006
Publisher: The Electrochemical Society
Citation: Wolfgang Windl, "Ab-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in Silicon," ECS Transactions 3, no. 4 (2006), doi:10.1149/1.2355755
DOI: 10.1149/1.2355755
Abstract: In this paper, we discuss concepts and examples of ab-initio calculations to understand the energetics and kinetics of defects and impurities in silicon. We focus on how to determine equilibrium distributions and diffusion and reaction constants,where modern methods such as the nudged elastic band method in combination with density-functional theory allow a systematic and reliable search for the minimum-energy migration paths and barriers. Since calculations especially for Si self-diffusion give sometimes controversial results when compared to experiments, we also discuss their validity and possible improved theoretical approaches in order to enhance the predictive power of ab-initio calculations.
ISSN: 1938-6737
URI: http://hdl.handle.net/1811/49198
Rights: © The Electrochemical Society, Inc. 2006. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 3 (4) 171-182.
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