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Vacancy defect and defect cluster energetics in ion-implanted ZnO

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Title: Vacancy defect and defect cluster energetics in ion-implanted ZnO
Creators: Dong, Yufeng; Tuomisto, F.; Svensson, B. G.; Kuznetsov, A. Yu.; Brillson, Leonard J.
Issue Date: 2010-02-01
Publisher: American Physical Society
Citation: Yufeng Dong et al, "Vacancy defect and defect cluster energetics in ion-implanted ZnO," Physical Review B 81, no. 8 (2010), doi:10.1103/PhysRevB.81.081201
DOI: 10.1103/PhysRevB.81.081201
Abstract: We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.
ISSN: 1550-235X
URI: http://hdl.handle.net/1811/48006
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