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High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

Please use this identifier to cite or link to this item: http://hdl.handle.net/1811/48004

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Title: High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As
Creators: Wu, D.; Wei, Peng; Johnston-Halperin, E.; Awschalom, D. D.; Shi, Jing
Issue Date: 2008-03-17
Publisher: American Physical Society
Citation: D. Wu et al, "High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As," Physical Review B 77, no. 12 (2008), doi:10.1103/PhysRevB.77.125320
DOI: 10.1103/PhysRevB.77.125320
Abstract: As the magnetization rotates in the (001) plane of epitaxial (Ga,Mn)As films, we observe both two- and fourfold oscillations of comparable magnitude in the longitudinal resistivity. This behavior is different from the usual anisotropic magnetoresistance effect in polycrystalline films. The fourfold or cubic symmetry vanishes at the Curie temperature T_C, indicating that it originates from the long-range ferromagnetic phase in single crystal films. In contrast, the twofold symmetry persists above T_C, suggesting its origin to be from the alignment of spins with random orientations. However, the transverse, or planar Hall, resistivity only contains a twofold oscillation. The temperature dependence of the magnetocrystalline anisotropic resistance effect is explained by a two-component model.
ISSN: 1550-235X
URI: http://hdl.handle.net/1811/48004
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