# Knowledge Bank

## University Libraries and the Office of the Chief Information Officer

The Knowledge Bank is scheduled for regular maintenance on Sunday, April 20th, 8:00 am to 12:00 pm EDT. During this time users will not be able to register, login, or submit content.

# AB INITIO CALCULATION OF THE ELECTRONIC TRANSITIONS OF $Er^{3+}$ DOPED INTO GaN

Please use this identifier to cite or link to this item: http://hdl.handle.net/1811/21354

Files Size Format View
2004-RJ-06.jpg 212.8Kb JPEG image

 Title: AB INITIO CALCULATION OF THE ELECTRONIC TRANSITIONS OF $Er^{3+}$ DOPED INTO GaN Creators: Yang, Yang; Pitzer, Russell M. Issue Date: 2004 Abstract: As a potential application in optical communications, the $1.54 \mu$m photoluminescence ($^{4}I_{13/2} \rightarrow ^{4}I_{15/2}$ intra-4f shell emissions) of $Er^{3+}$ doped in the semiconductor GaN has been studied extensively since 1983. Few ab initio calculations touched this system before because of the difficulties dealing with the large number of electrons and the significant relativistic effects related to $Er^{3+}$. Based on relativistic effective core potentials, spin-orbit configuration interaction calculations have been performed on this system. The study of the wave function character and energy of both the ground and excited states of $ErN^{9-}_{4}$ plus the computation of the transition moments between the states gives a better understanding of the experimental results. URI: http://hdl.handle.net/1811/21354 Other Identifiers: 2004-RJ-06