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INFRARED EMISSION STUDIES OF THE $A^{3}\Sigma^{-} - X^{3}\Pi$ ELECTRONIC TRANSITION OF SiC

Please use this identifier to cite or link to this item: http://hdl.handle.net/1811/18817

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Title: INFRARED EMISSION STUDIES OF THE $A^{3}\Sigma^{-} - X^{3}\Pi$ ELECTRONIC TRANSITION OF SiC
Creators: Deo, M. N.; Kawaguchi, K.
Issue Date: 1998
Abstract: The gas phase infrared emission spectrum of the $A^{3}\Sigma^{-}-X^{3}\Pi$ electronic transition of SiC has been observed using Fourier transform spectrometer. The SiC radical was generated by a d*** discharge in a flowing mixture of $(CH_{3})_{6}Si_{2}$ and He. Three bands $1-0 (4577.8 cm^{-1}), 0-0 (3723.1 cm^{-1})$ and $0-1 (2769.8 cm^{-1})$ have been observed, out of these the last two were observed for the first $time^{a}$. Altogether more than 1100 transitions have been assigned and these data were simultaneously least squares fitted and obtained the molecular constants for SiC in the $A^{3}\Sigma^{-}$ and $X^{3}\Pi$ electronic states. The vibrational frequency $\nu_{0}$ in the A state was determined to be $854.6994(7) cm^{-1}$, which is close to the matrix $result^{b} 854.2 cm^{-1}$.
URI: http://hdl.handle.net/1811/18817
Other Identifiers: 1998-MG-11
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