# INFRARED EMISSION STUDIES OF THE $A^{3}\Sigma^{-} - X^{3}\Pi$ ELECTRONIC TRANSITION OF SiC

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 Title: INFRARED EMISSION STUDIES OF THE $A^{3}\Sigma^{-} - X^{3}\Pi$ ELECTRONIC TRANSITION OF SiC Creators: Deo, M. N.; Kawaguchi, K. Issue Date: 1998 Publisher: Ohio State University Abstract: The gas phase infrared emission spectrum of the $A^{3}\Sigma^{-}-X^{3}\Pi$ electronic transition of SiC has been observed using Fourier transform spectrometer. The SiC radical was generated by a d*** discharge in a flowing mixture of $(CH_{3})_{6}Si_{2}$ and He. Three bands $1-0 (4577.8 cm^{-1}), 0-0 (3723.1 cm^{-1})$ and $0-1 (2769.8 cm^{-1})$ have been observed, out of these the last two were observed for the first $time^{a}$. Altogether more than 1100 transitions have been assigned and these data were simultaneously least squares fitted and obtained the molecular constants for SiC in the $A^{3}\Sigma^{-}$ and $X^{3}\Pi$ electronic states. The vibrational frequency $\nu_{0}$ in the A state was determined to be $854.6994(7) cm^{-1}$, which is close to the matrix $result^{b} 854.2 cm^{-1}$. Description: $^{a}4577.8 cm^{-1}$ band was first observed by Brazier et. al. [J. Chem. Phys., 91, 7384(1989)] and they identified it as 0-0 band. $^{b}$M. Grutter, P. Freivogel and J.P. Maier, J. Phys. Chem. A, 101, 275(1997) Author Institution: Nobeyama Radio Observatory, Minamimaki URI: http://hdl.handle.net/1811/18817 Other Identifiers: 1998-MG-11