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DIODE LASER SPECTRA OF SiS IN THE REGION FROM 700 TO $800 CM^{-1}$. ROTATIONAL CONSTANTS AND FOREIGN-GAS BROADENING PARAMETERS

Please use this identifier to cite or link to this item: http://hdl.handle.net/1811/18306

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Title: DIODE LASER SPECTRA OF SiS IN THE REGION FROM 700 TO $800 CM^{-1}$. ROTATIONAL CONSTANTS AND FOREIGN-GAS BROADENING PARAMETERS
Creators: Reuter, D. C.; Kurtz, Joe
Issue Date: 1990
Abstract: Infrared spectra of the SiS molecule have been obtained using the GSFC tunable lead-salt diode laser $spectrometer^{1}$. The spectrometer was used in the single beam mode and spectra were acquired by multi-sweep averaging. Frequency calibration was performed using precisely known $C_{2}H_{2}$ transition frequencies and a high-finesse etalon. Molecular SiS was made by heating a quartz cell containing a mixture of $SiS_{2}$ and Si to temperatures in the range of 770 to 1100 C. At these temperatures spectra may be obtained for J-values ranging up to - 100. Several hot-band transitions were also evident. Foreign-gas broadening parameters were measured for $N_{2}$ and He. The usual rotational constants were derived
URI: http://hdl.handle.net/1811/18306
Other Identifiers: 1990-TF-12
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