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DETERMINATION OF REACTION RATE AND DIFFUSION CONSTANTS OF THE $S1H_{3}$ RADICAL IN SILANE PLASMAS

Please use this identifier to cite or link to this item: http://hdl.handle.net/1811/18029

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Title: DETERMINATION OF REACTION RATE AND DIFFUSION CONSTANTS OF THE $S1H_{3}$ RADICAL IN SILANE PLASMAS
Creators: Yamada, Chikashi; Hirota, Eizi; Itabashi, Naoshi; Kato, Kozo; Nishiwaki, Nobuki; Goto, Toshio
Issue Date: 1989
Abstract: Time resolved infrared spectra of $S1H_{3}$ were observed in pulsed discharge silane plasmas using diode laser kinetic spectroscopy. The rate of recombination plus disproportionation reactions was determined for the first time, together with the diffusion constants of $SiH_{3}$ in hydrogen and argon. These fundamental quantities will be useful in discussing CVD mechanisms leading to amorphous silicon.
URI: http://hdl.handle.net/1811/18029
Other Identifiers: 1989-WF-7
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